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| STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FP/D2PAK SuperFREDMeshTM MOSFET ADVANCED DATA TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.95 < 0.95 < 0.95 ID 7A 7A 7A Pw 125 W 30 W 125 W 3 1 2 TYPICAL RDS(on) = 0.85 VERY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES FAST INTERNAL RECOVERY DIODE TO-220 TO-220FP 3 1 DESCRIPTION The SuperFREDMeshTM series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the "FDmeshTM" Advanced Technology. APPLICATIONS s HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS D2PAK INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZDT4 MARKING P9NK60ZD F9NK60ZD B9NK60ZD PACKAGE TO-220 TO-220FP D PAK 2 PACKAGING TUBE TUBE TAPE & REEL January 2004 1/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-220 / D2PAK VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD (HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 150 7 4.3 28 125 1 4000 15 2500 600 600 30 7 (*) 4.3 (*) 28 (*) 30 0.24 TO-220FP V V V A A A W W/C V V/ns V C Unit ( ) Pulse width limited by safe operating area (1) ISD 7A, di/dt 500A/s, VDD V(BR)DSS, Tj = 25C (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 D2PAK Rthj-pcb Rthj-case Rthj-amb Tl Thermal Resistance Junction-pcb Max (When mounted on minimum Footprint) TO-220FP Unit C/W 30 1 62.5 300 4.16 Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose C/W C/W C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 7 235 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 100A VGS = 10V, ID = 3.5 A 2.5 3.5 0.85 Min. 600 1 50 10 4.5 0.95 Typ. Max. Unit V A A A V DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Symbol td(on) tr Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 3.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5.3 1110 135 30 72 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 480V Test Conditions VDD = 300 V, ID = 3.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 7 A, VGS = 10V Min. SWITCHING ON Typ. 22 17 41 8.7 21 53 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 3.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 7 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 42 15 11 8 20 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, VGS = 0 ISD = 7 A, di/dt = 100A/s VDD = 30V, Tj = 25C (see test circuit, Figure 5) ISD = 7 A, di/dt = 100A/s VDD = 30V, Tj = 150C (see test circuit, Figure 5) 150 663 8.5 194 935 9.6 Test Conditions Min. Typ. Max. 7 28 1.6 Unit A A V ns nC A ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Safe Operating Area For TO-220/DPAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/DPAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q 8/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 9/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 10/12 3 1 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 11/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 12/12 |
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